D. Stoppa, L. Viarani, A. Simoni, L. Gonzo, M. Malfatti, G. Pedretti
{"title":"16/spl倍/16像素测距CMOS图像传感器","authors":"D. Stoppa, L. Viarani, A. Simoni, L. Gonzo, M. Malfatti, G. Pedretti","doi":"10.1109/ESSCIR.2004.1356707","DOIUrl":null,"url":null,"abstract":"This paper describes the design and characterization of a 16/spl times/16-pixel image sensor, fabricated in a 0.35 /spl mu/m, 3.3 V CMOS technology for real time three dimensional measurements based on multiple-pulse indirect time-of-flight technique. Owing to an innovative fully differential pixel (FDP) architecture, which allows for the detection of very short and low intensity light pulses, the sensor array provides a range map from 2 m to 9 m with a precision of /spl plusmn/4.0% at 2 m and /spl plusmn/1.7% at 9 m. The pixel power consumption is 100 /spl mu/W, whereas the overall power consumption of the chip is 47 mW in real time operation (30 fps).","PeriodicalId":294077,"journal":{"name":"Proceedings of the 30th European Solid-State Circuits Conference","volume":"273 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A 16/spl times/16-pixel range-finding CMOS image sensor\",\"authors\":\"D. Stoppa, L. Viarani, A. Simoni, L. Gonzo, M. Malfatti, G. Pedretti\",\"doi\":\"10.1109/ESSCIR.2004.1356707\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and characterization of a 16/spl times/16-pixel image sensor, fabricated in a 0.35 /spl mu/m, 3.3 V CMOS technology for real time three dimensional measurements based on multiple-pulse indirect time-of-flight technique. Owing to an innovative fully differential pixel (FDP) architecture, which allows for the detection of very short and low intensity light pulses, the sensor array provides a range map from 2 m to 9 m with a precision of /spl plusmn/4.0% at 2 m and /spl plusmn/1.7% at 9 m. The pixel power consumption is 100 /spl mu/W, whereas the overall power consumption of the chip is 47 mW in real time operation (30 fps).\",\"PeriodicalId\":294077,\"journal\":{\"name\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"volume\":\"273 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-11-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 30th European Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIR.2004.1356707\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 30th European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIR.2004.1356707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 16/spl times/16-pixel range-finding CMOS image sensor
This paper describes the design and characterization of a 16/spl times/16-pixel image sensor, fabricated in a 0.35 /spl mu/m, 3.3 V CMOS technology for real time three dimensional measurements based on multiple-pulse indirect time-of-flight technique. Owing to an innovative fully differential pixel (FDP) architecture, which allows for the detection of very short and low intensity light pulses, the sensor array provides a range map from 2 m to 9 m with a precision of /spl plusmn/4.0% at 2 m and /spl plusmn/1.7% at 9 m. The pixel power consumption is 100 /spl mu/W, whereas the overall power consumption of the chip is 47 mW in real time operation (30 fps).