用光电导测量方法表征多晶硅触点

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51062

B. Jalali, E. S. Yang

{"title":"用光电导测量方法表征多晶硅触点","authors":"B. Jalali, E. S. Yang","doi":"10.1109/BIPOL.1988.51062","DOIUrl":null,"url":null,"abstract":"The confinement property of polysilicon contacts, leading to storage of minority carriers, has been studied using the photoconductivity technique. Steady-state and transient optical measurement show a considerable increase of stored carriers by these contacts. A model has been developed that allows the extraction of contact parameters.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization of polysilicon contacts by photoconductance measurements\",\"authors\":\"B. Jalali, E. S. Yang\",\"doi\":\"10.1109/BIPOL.1988.51062\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The confinement property of polysilicon contacts, leading to storage of minority carriers, has been studied using the photoconductivity technique. Steady-state and transient optical measurement show a considerable increase of stored carriers by these contacts. A model has been developed that allows the extraction of contact parameters.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51062\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51062","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用光电导技术研究了多晶硅触点的约束特性，从而导致少量载流子的存储。稳态和瞬态光学测量表明，这些接触大大增加了存储载流子的数量。已经开发了一个可以提取接触参数的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Characterization of polysilicon contacts by photoconductance measurements

The confinement property of polysilicon contacts, leading to storage of minority carriers, has been studied using the photoconductivity technique. Steady-state and transient optical measurement show a considerable increase of stored carriers by these contacts. A model has been developed that allows the extraction of contact parameters.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

自引率

0.00%

发文量