M. Gill, R. Cleavelin, S. Lin, I. D'Arrigo, G. Santin, P. Shah, A. Nguyen, R. Lahiry, P. Desimone, G. Piva, J. Paterson
{"title":"用于高密度存储器和系统IC应用的仅5伏闪存EEPROM技术","authors":"M. Gill, R. Cleavelin, S. Lin, I. D'Arrigo, G. Santin, P. Shah, A. Nguyen, R. Lahiry, P. Desimone, G. Piva, J. Paterson","doi":"10.1109/CICC.1989.56783","DOIUrl":null,"url":null,"abstract":"A CMOS contactless cell array technology has been developed for a single-power-supply high-density, five-V-only flash memory and for system programmable IC applications. The technology's suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM (electronically erasable programmable read-only memory) chip. This low-current five-V-only approach has been proved, with cell area and cost comparable to recently reported high-current dual-power-supply flash EEPROMs","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A five-volt only flash EEPROM technology for high density memory and system IC applications\",\"authors\":\"M. Gill, R. Cleavelin, S. Lin, I. D'Arrigo, G. Santin, P. Shah, A. Nguyen, R. Lahiry, P. Desimone, G. Piva, J. Paterson\",\"doi\":\"10.1109/CICC.1989.56783\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS contactless cell array technology has been developed for a single-power-supply high-density, five-V-only flash memory and for system programmable IC applications. The technology's suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM (electronically erasable programmable read-only memory) chip. This low-current five-V-only approach has been proved, with cell area and cost comparable to recently reported high-current dual-power-supply flash EEPROMs\",\"PeriodicalId\":165054,\"journal\":{\"name\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1989.56783\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56783","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A five-volt only flash EEPROM technology for high density memory and system IC applications
A CMOS contactless cell array technology has been developed for a single-power-supply high-density, five-V-only flash memory and for system programmable IC applications. The technology's suitability for VLSI memories has been demonstrated by a 256-kb flash EEPROM (electronically erasable programmable read-only memory) chip. This low-current five-V-only approach has been proved, with cell area and cost comparable to recently reported high-current dual-power-supply flash EEPROMs