铁电材料负电容的微观成因:一个玩具模型

A. Khan
{"title":"铁电材料负电容的微观成因:一个玩具模型","authors":"A. Khan","doi":"10.1109/IEDM.2018.8614574","DOIUrl":null,"url":null,"abstract":"We present a simple, physical explanation of underlying microscopic mechanisms that lead to the emergence of the negative phenomena in ferroelectric materials. The material presented herein is inspired by the pedagogical treatment of ferroelectricity by Feynman and Kittel. In a toy model consisting of a linear one-dimensional chain of polarizable units (i.e., atoms or unit cells of a crystal structure), we show how simple electrostatic interactions can create a microscopic, positive feedback action that leads to negative capacitance phenomena. We point out that the unstable negative capacitance effect has its origin in the so called “polarization catastrophe” phenomenon which is essential to explain displacement type ferroelectrics. Furthermore, the fact that even in the negative capacitance state, the individual dipole always aligns along the direction of the local electrical field not opposite is made clear through the toy model. Finally, how the “$S$”-shaped polarization vs. applied electric field curve emerges out of the electrostatic interactions in an ordered set of polarizable units is shown.","PeriodicalId":152963,"journal":{"name":"2018 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"On the Microscopic Origin of Negative Capacitance in Ferroelectric Materials: A Toy Model\",\"authors\":\"A. Khan\",\"doi\":\"10.1109/IEDM.2018.8614574\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a simple, physical explanation of underlying microscopic mechanisms that lead to the emergence of the negative phenomena in ferroelectric materials. The material presented herein is inspired by the pedagogical treatment of ferroelectricity by Feynman and Kittel. In a toy model consisting of a linear one-dimensional chain of polarizable units (i.e., atoms or unit cells of a crystal structure), we show how simple electrostatic interactions can create a microscopic, positive feedback action that leads to negative capacitance phenomena. We point out that the unstable negative capacitance effect has its origin in the so called “polarization catastrophe” phenomenon which is essential to explain displacement type ferroelectrics. Furthermore, the fact that even in the negative capacitance state, the individual dipole always aligns along the direction of the local electrical field not opposite is made clear through the toy model. Finally, how the “$S$”-shaped polarization vs. applied electric field curve emerges out of the electrostatic interactions in an ordered set of polarizable units is shown.\",\"PeriodicalId\":152963,\"journal\":{\"name\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2018.8614574\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2018.8614574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

我们提出了一个简单的,导致铁电材料中出现负现象的潜在微观机制的物理解释。本文介绍的材料受到费曼和基特尔对铁电性的教学处理的启发。在一个由线性一维极化单元链(即原子或晶体结构的单元)组成的玩具模型中,我们展示了简单的静电相互作用如何产生微观的正反馈作用,从而导致负电容现象。指出不稳定负电容效应的根源在于解释位移型铁电体的“极化突变”现象。此外,通过玩具模型清楚地表明,即使在负电容状态下,单个偶极子也总是沿着局部电场的方向排列,而不是相反。最后,展示了“$S$”形极化与外加电场曲线是如何在有序的极化单元集中的静电相互作用中出现的。
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On the Microscopic Origin of Negative Capacitance in Ferroelectric Materials: A Toy Model
We present a simple, physical explanation of underlying microscopic mechanisms that lead to the emergence of the negative phenomena in ferroelectric materials. The material presented herein is inspired by the pedagogical treatment of ferroelectricity by Feynman and Kittel. In a toy model consisting of a linear one-dimensional chain of polarizable units (i.e., atoms or unit cells of a crystal structure), we show how simple electrostatic interactions can create a microscopic, positive feedback action that leads to negative capacitance phenomena. We point out that the unstable negative capacitance effect has its origin in the so called “polarization catastrophe” phenomenon which is essential to explain displacement type ferroelectrics. Furthermore, the fact that even in the negative capacitance state, the individual dipole always aligns along the direction of the local electrical field not opposite is made clear through the toy model. Finally, how the “$S$”-shaped polarization vs. applied electric field curve emerges out of the electrostatic interactions in an ordered set of polarizable units is shown.
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