{"title":"金属/半导体结隙态控制的物理学研究肖特基势垒与界面缺陷","authors":"T. Nakayama","doi":"10.23919/IWJT.2019.8802894","DOIUrl":null,"url":null,"abstract":"In this paper, we explain recent advances in the understanding and control of Schottky barrier and interface defects at metal/semiconductor interfaces, by illustrating metal/Ge and metal/(SiC,GaN) interfaces.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Physics of Gap-state Control at Metal/Semiconductor Junctions; Schottky Barrier and Interface Defects\",\"authors\":\"T. Nakayama\",\"doi\":\"10.23919/IWJT.2019.8802894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we explain recent advances in the understanding and control of Schottky barrier and interface defects at metal/semiconductor interfaces, by illustrating metal/Ge and metal/(SiC,GaN) interfaces.\",\"PeriodicalId\":441279,\"journal\":{\"name\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IWJT.2019.8802894\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physics of Gap-state Control at Metal/Semiconductor Junctions; Schottky Barrier and Interface Defects
In this paper, we explain recent advances in the understanding and control of Schottky barrier and interface defects at metal/semiconductor interfaces, by illustrating metal/Ge and metal/(SiC,GaN) interfaces.
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