{"title":"用于低成本EHF卫星通信终端的高性能HEMT微处理器","authors":"J. Lester, W. Jones, P. Huang, D. Garske, P. Chow","doi":"10.1109/MCS.1992.186012","DOIUrl":null,"url":null,"abstract":"A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<<ETX>>","PeriodicalId":336288,"journal":{"name":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High performance HEMT MMICs for low cost EHF SATCOM terminals\",\"authors\":\"J. Lester, W. Jones, P. Huang, D. Garske, P. Chow\",\"doi\":\"10.1109/MCS.1992.186012\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<<ETX>>\",\"PeriodicalId\":336288,\"journal\":{\"name\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1992.186012\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 1992 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1992.186012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance HEMT MMICs for low cost EHF SATCOM terminals
A set of high-performance pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) monolithic microwave integrated circuits (MMICs) for insertion into a low-cost transceiver for EHF satellite communication terminal applications is presented. A 20-GHz MMIC low-noise amplifier (LNA) with a 2.8-dB noise figure and 38-dB gain and a 44-GHz driver amplifier with an output power of +17.8 dBm, 22.8-dB gain, and 17% efficiency are described. Also reported are HEMT MMIC doublers with output frequencies of 17, 22, and 44 GHz which demonstrated +13-, +12- and +5-dBm power output with 1-dB conversion loss, 1-dB conversion gain, and 4-dB conversion loss, respectively.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
