H. Hwang, Tae-Wan Lee, Y. Moon, E. Yoon, Y. D. Kim
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In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption
InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
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