表面光吸收原位观察InAs/InP量子阱结构中As/P交换反应及As携带

H. Hwang, Tae-Wan Lee, Y. Moon, E. Yoon, Y. D. Kim
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引用次数: 0

摘要

采用低压金属有机化学气相沉积法生长了InAs/InP量子阱结构。在生长过程中,通过表面光吸收原位监测As/P交换反应和As的携带。我们利用多层模型和有效介质理论对测量到的SPA信号进行了模拟,得到了将其带入InP层的As成分剖面。
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In-situ observation of As/P exchange reaction and As carryover in InAs/InP quantum well structures by surface photoabsorption
InAs/InP quantum well structures were grown by low pressure metal organic chemical vapor deposition. During the growth, the As/P exchange reaction and As carryover were monitored in-situ by surface photoabsorption. We simulated the measured SPA signal using a multilayer model and effective medium theory to obtain the As compositional profile which was carried over into the InP layer.
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