一种用于低阻触点和肖特基势垒mosfet的新结技术

Extended Abstracts of the Fifth International Workshop on Junction Technology Pub Date : 2005-06-07 DOI:10.1109/IWJT.2005.203895

D. Grupp, D. Connelly, C. Faulkner, P. Clifton

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摘要

通过在低功功能金属和硅之间施加超薄绝缘体，结的肖特基势垒可以大大降低，从而降低结电阻。利用这种方法，展示了以Mg和Yb为S/D金属的低肖特基势垒金属S/D mosfet。

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A new junction technology for low-resistance contacts and Schottky barrier MOSFETs

By imposing an ultra-thin insulator between low-workfunction metals and silicon, the Schottky barrier of the junction can be substantially reduced, reducing junction resistance. With this approach, low Schottky barrier metal S/D MOSFETs with Mg and Yb as S/D metals are demonstrated.

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Extended Abstracts of the Fifth International Workshop on Junction Technology

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