{"title":"In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As多量子阱的两步快速热退火介电诱导互扩散","authors":"Kyeongran Yoo, Y. Moon, Tae-Wan Lee, E. Yoon","doi":"10.1109/COMMAD.1998.791617","DOIUrl":null,"url":null,"abstract":"A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"358 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing\",\"authors\":\"Kyeongran Yoo, Y. Moon, Tae-Wan Lee, E. Yoon\",\"doi\":\"10.1109/COMMAD.1998.791617\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"358 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791617\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791617","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Dielectric induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multiple quantum wells by two step rapid thermal annealing
A new scheme for the dielectric-induced interdiffusion of In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As MQWs was reported. The vacancy-generating chemical reaction of SiO/sub 2/ with an In/sub 0.53/Ga/sub 0.47/As capping layer was confined to the first-step rapid thermal annealing (RTA) time. After the generation of a fixed amount of vacancies during the first-step RTA, the dielectric layer was stripped off and subsequently the second-step RTA was made to interdiffuse the MQWs. It was found that the interdiffusion coefficients during the second-step RTA were constant and linearly proportional to the first-step RTA time.
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