nMOS和pMOS短沟道无结纳米线晶体管的低频噪声

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404379

R. Doria, R. Trevisoli, M. de Souza, I. Ferain, S. Das, M. Pavanello

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引用次数: 8

摘要

本文对不同L和掺杂浓度的p型和n型JNTs中的LFN进行了实验分析。JNTs显示1/f噪声是主要噪声成分，这与nMOS中的CNF和pMOS中的MF有关。SId随掺杂浓度的升高和L的升高而降低。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low-Frequency Noise of nMOS and pMOS short channel junctionless nanowire transistors

This work presented an experimental analysis of the LFN in p and n-type JNTs of different L and doping concentrations. JNTs have shown 1/f noise as the main noise component, which has been associated to CNF in nMOS and MF in the pMOS. Also, SId reduced with the rise of the doping concentration and with the raise of L.

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2012 IEEE International SOI Conference (SOI)

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