在接近室温下工作的红外光电探测器

Jozef Piotrowski, C. Musca, J. Dell, L. Faraone
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引用次数: 2

摘要

本文报道了近室温(200-300 K)下工作在3-16 /spl μ m光谱范围的红外探测器领域的最新进展。器件性能的基本限制是由热生成-复合过程的统计性质和相关噪声所施加的。用于光电探测器的材料的优点值是吸收系数与体积产生率的比值,/spl α //G。比较各种材料,可以发现窄带隙半导体比外源材料表现出更高的α //G。虽然HgCdTe仍然是近室温红外探测器最重要的材料,但HgMnTe, HgZnTe, InAsSb和tl基III-V化合物是可能取代它的候选材料。近室温红外(NRTIR)光电探测器的性能可以通过降低器件有源区的总产生率和复合率来提高。讨论了实现这一目标的各种方法,包括半导体的选择,非平衡操作模式,以及消除表面和接触上的寄生热产生。通过使用光学聚光器和光学谐振腔,可以在不减少器件表观“光学”面积的情况下减小探测器的物理体积,从而获得进一步的改进。类似的方法也适用于超长波长(16-30 /spl μ m)的低温冷却探测器。介绍了各种实用的NRTIR光电探测器,如光导、光电磁和光伏探测器。光伏器件是最有前途的NRTIR类型,因为它们不需要偏压,也没有低频噪声。然而,传统的单结光电探测器存在量子效率低、电阻低的问题。这些限制可以通过基于多结异质结构的新颖解决方案来消除,这些解决方案能够在实践中实现高性能。
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Infrared photodetectors operating at near room temperature
Recent progress in the field of infrared photodetectors operating in the 3-16 /spl mu/m spectral range at near room-temperatures (200-300 K) is reported. The fundamental limits to performance of the devices are imposed by the statistical nature of thermal generation-recombination processes and related noise. The figure of merit of a material for photodetectors is the ratio of absorption coefficient to the volume generation rate, /spl alpha//G. Comparing various materials one can find that narrow bandgap semiconductors exhibit much higher /spl alpha//G than extrinsic materials. While HgCdTe remains the most important material for near room temperature infrared photodetectors, HgMnTe, HgZnTe, InAsSb and Tl-based III-V compounds are possible candidates to replace it. The performance of near room temperature infrared (NRTIR) photodetectors can be improved by reduction of the total rate of generation and recombination in the active region of the device. Various methods to achieve this are discussed including selection of semiconductor, non-equilibrium mode of operation, and elimination of parasitic thermal generation on surfaces and contacts. Further improvement can be obtained by reduction of the physical volume of the detector without reduction of the apparent "optical" area of the device by the use of optical concentrators and optically resonant cavities. Similar methods are applicable to cryogenically cooled detectors operating at very long wavelengths (16-30 /spl mu/m). Various practical NRTIR photodetectors are described, such as photoconductive, photoelectromagnetic and photovoltaic detectors. Photovoltaic devices are the most promising type of NRTIR, since they require no bias and exhibit no low frequency noise. However, conventional single junction photovoltaic detectors suffer from very low quantum efficiency and low resistance. These limitations can be removed with novel solutions based on multijunction heterostructures which are capable of achieving high performance in practice.
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