{"title":"SONOS型存储单元，具有ALD LaAlO阻塞氧化物，可实现高速运行","authors":"Wei He, D. Chan, B. Cho","doi":"10.1109/ICSICT.2008.4734672","DOIUrl":null,"url":null,"abstract":"LaAlO<sub>x</sub> with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlO<sub>x</sub> compare to La<sub>2</sub>O<sub>3</sub> deposition. The mechanism behind improvement is proposed. ALD LaAlO<sub>x</sub> is found to be thermally stable up to 850°C anneal. Compared with Al<sub>2</sub>O<sub>3</sub> blocking oxide control samples, the SONOS devices with LaAlO<sub>x</sub> blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaAlO<sub>x</sub> is an attractive candidate as a blocking layer in SONOS type flash memory application.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation\",\"authors\":\"Wei He, D. Chan, B. Cho\",\"doi\":\"10.1109/ICSICT.2008.4734672\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"LaAlO<sub>x</sub> with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlO<sub>x</sub> compare to La<sub>2</sub>O<sub>3</sub> deposition. The mechanism behind improvement is proposed. ALD LaAlO<sub>x</sub> is found to be thermally stable up to 850°C anneal. Compared with Al<sub>2</sub>O<sub>3</sub> blocking oxide control samples, the SONOS devices with LaAlO<sub>x</sub> blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaAlO<sub>x</sub> is an attractive candidate as a blocking layer in SONOS type flash memory application.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734672\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SONOS type memory cell with ALD LaAlO blocking oxide for high speed operation
LaAlOx with a permittivity of 17 is fabricated successfully by ALD method. Enhanced deposition rate, improved uniformity and self-limiting behavior were observed for LaAlOx compare to La2O3 deposition. The mechanism behind improvement is proposed. ALD LaAlOx is found to be thermally stable up to 850°C anneal. Compared with Al2O3 blocking oxide control samples, the SONOS devices with LaAlOx blocking oxide demonstrate similar retention performance with much faster operation speed and better resistance to high operation voltage and high stress. The results indicate that LaAlOx is an attractive candidate as a blocking layer in SONOS type flash memory application.
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