{"title":"Si/sub - 1-x/Ge/sub -x/ HBTs截止频率优化","authors":"L. Ai, M. Cheng","doi":"10.1109/ISDRS.2003.1272047","DOIUrl":null,"url":null,"abstract":"In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs\",\"authors\":\"L. Ai, M. Cheng\",\"doi\":\"10.1109/ISDRS.2003.1272047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimization of the cutoff frequency for Si/sub 1-x/Ge/sub x/ HBTs
In this paper, we derive an analytical expression for the total delay time /spl tau//sub tot/ in Si/sub 1-x/Ge/sub x/HBTs and based on the expression, the influences of the Ge composition profile X/sub Ge/(y) in the base on total delay time /spl tau//sub tot/ is examined for optimization of cutoff frequency f/sub T/. Total delay times are varied by varying doping profiles and Ge composition. Trapezoid-like base Ge composition profile and total delay time for the Si/sub 1-x/Ge/sub x/ HBT were studied.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
