{"title":"柔性塑料单晶硅CMOS","authors":"Z. Ma, Hao-Chih Yuan, G. Celler","doi":"10.1109/ICSICT.2008.4734723","DOIUrl":null,"url":null,"abstract":"In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Flexible plastic single-crystal si CMOS\",\"authors\":\"Z. Ma, Hao-Chih Yuan, G. Celler\",\"doi\":\"10.1109/ICSICT.2008.4734723\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734723\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, the materials, processing and device characteristics of flexible Si CMOS on plastic substrates are reviewed. The methods to create transferrable single-crystal Si nanomembranes are described first followed by the description of doping and transfer techniques developed for the nanomembranes. The preliminary device characteristics of CMOS and inverters on plastic substrates are presented.