GHz硅片探测校准方法

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51067

A. Fraser, R. Gleason, E. Strid

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引用次数: 43

摘要

通过比较蓝宝石和硅的校准标准，评估了三种用于18 GHz硅晶圆s参数测量的校准/校正技术。这些技术的效果是通过测量大型和小型装置，连接到大型和小型垫来评估的。给出了硅基标定标准的等效电路模型。此外，还提出了一种测量背面集电极晶圆上s参数的新方法。

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GHz on-silicon-wafer probing calibration methods

Three calibration/correction techniques for on-silicon-wafer S-parameter measurements to 18 GHz were assessed by comparing calibration standards on sapphire and silicon. The effect of these techniques was evaluated by measuring large and small devices, connected to large and small pads. Equivalent circuit models for the calibration standards on silicon are presented. In addition, a new technique for on-wafer S-parameter measurements of backside collector devices is presented.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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