JOGM:一种使用慢跑晶体管栅极的CMOS单元布局样式

Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference Pub Date : 1993-09-20 DOI:10.1109/EURDAC.1993.410635

Ronald D. Hindmarsh

{"title":"JOGM:一种使用慢跑晶体管栅极的CMOS单元布局样式","authors":"Ronald D. Hindmarsh","doi":"10.1109/EURDAC.1993.410635","DOIUrl":null,"url":null,"abstract":"A new width minimizing layout style called jogged gate matrix (JOGM) for CMOS cells is described. The traditional gate matrix layout style is modified by inserting 45/spl deg/ jogs into transistor gates. Thus, JOGM improves CMOS cell width by 23% to 31% in comparison to traditional gate matrix layout. An approach for automatic layout generation is suggested.<<ETX>>","PeriodicalId":339176,"journal":{"name":"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"JOGM: A CMOS cell layout style using jogged transistor gates\",\"authors\":\"Ronald D. Hindmarsh\",\"doi\":\"10.1109/EURDAC.1993.410635\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new width minimizing layout style called jogged gate matrix (JOGM) for CMOS cells is described. The traditional gate matrix layout style is modified by inserting 45/spl deg/ jogs into transistor gates. Thus, JOGM improves CMOS cell width by 23% to 31% in comparison to traditional gate matrix layout. An approach for automatic layout generation is suggested.<<ETX>>\",\"PeriodicalId\":339176,\"journal\":{\"name\":\"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EURDAC.1993.410635\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of EURO-DAC 93 and EURO-VHDL 93- European Design Automation Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EURDAC.1993.410635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

描述了一种新的宽度最小化布局样式，称为慢跑门矩阵(JOGM)的CMOS电池。传统的栅极矩阵布局方式通过在晶体管栅极中插入45/spl°/ jogs来改进。因此，与传统栅极矩阵布局相比，JOGM将CMOS单元宽度提高了23%至31%。提出了一种自动生成布局的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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JOGM: A CMOS cell layout style using jogged transistor gates

A new width minimizing layout style called jogged gate matrix (JOGM) for CMOS cells is described. The traditional gate matrix layout style is modified by inserting 45/spl deg/ jogs into transistor gates. Thus, JOGM improves CMOS cell width by 23% to 31% in comparison to traditional gate matrix layout. An approach for automatic layout generation is suggested.<>

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