用一种新的等离子体源快速干蚀刻磁性隧道结

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS) Pub Date : 2014-10-01 DOI:10.1109/NVMTS.2014.7060848

K. Whang, H. Cheong, J. W. Kim

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引用次数: 0

摘要

我们研制了一种新型等离子体反应器，可以在低中性气压力下产生高密度等离子体。在中性气压力低于1mTorr的情况下，新型等离子体反应器中的离子电流密度比传统电感耦合等离子体(ICP)反应器高10倍以上。结果表明，该等离子体反应器可在40秒内刻蚀出厚度为25nm的磁隧道结(MTJ)层，并形成厚度为26nm的氧化凹槽。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A fast dry etching of magnetic tunnel junction using a new plasma source

We have developed a new plasma reactor which can generate high density plasma at low neutral gas pressure. The ion current density in the new plasma reactor is more than ten times higher than that in the conventional inductively coupled plasma (ICP) reactor at neutral gas pressure lower than 1mTorr. It is remarkable that 25nm-thick magnetic tunnel junction (MTJ) stack can be etched and a 26nm-depth oxide recess can be formed within 40 seconds with the newly designed plasma reactor.

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2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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