Y. Fujiwara, S. Ichikawa, D. Timmerman, J. Tatebayashi
{"title":"下一代微型LED显示用掺铕氮化镓红色LED","authors":"Y. Fujiwara, S. Ichikawa, D. Timmerman, J. Tatebayashi","doi":"10.23919/ICEP55381.2022.9795364","DOIUrl":null,"url":null,"abstract":"A novel red LED using Eu-doped GaN is a promising component for next-generation micro-LED display with ultrasmall-size, full-color, and high-resolution. The LED exhibits narrow-band red emission and the wavelength is almost independent of ambient temperature and injected current. The size dependence of emission efficiency is negligibly small compared with conventional AlInGaP-based red LEDs. We also demonstrated monolithic integration of vertically stacked full-color LEDs on a sapphire substrate.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Eu-doped GaN-Based Red LED for Next-Generation Micro-LED Displays\",\"authors\":\"Y. Fujiwara, S. Ichikawa, D. Timmerman, J. Tatebayashi\",\"doi\":\"10.23919/ICEP55381.2022.9795364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel red LED using Eu-doped GaN is a promising component for next-generation micro-LED display with ultrasmall-size, full-color, and high-resolution. The LED exhibits narrow-band red emission and the wavelength is almost independent of ambient temperature and injected current. The size dependence of emission efficiency is negligibly small compared with conventional AlInGaP-based red LEDs. We also demonstrated monolithic integration of vertically stacked full-color LEDs on a sapphire substrate.\",\"PeriodicalId\":413776,\"journal\":{\"name\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP55381.2022.9795364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP55381.2022.9795364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Eu-doped GaN-Based Red LED for Next-Generation Micro-LED Displays
A novel red LED using Eu-doped GaN is a promising component for next-generation micro-LED display with ultrasmall-size, full-color, and high-resolution. The LED exhibits narrow-band red emission and the wavelength is almost independent of ambient temperature and injected current. The size dependence of emission efficiency is negligibly small compared with conventional AlInGaP-based red LEDs. We also demonstrated monolithic integration of vertically stacked full-color LEDs on a sapphire substrate.
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