高k/金属栅极堆应变硅纳米线阵列mosfet

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193355

S. Richter, S. Trellenkamp, M. Schmidt, A. Schafer, K. Bourdelle, Q. Zhao, S. Mantl

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引用次数: 2

摘要

本文介绍了金属氧化物半导体场效应晶体管(mosfet)的实验结果，该晶体管具有1000个三角单轴应变纳米线阵列，其横截面为15 × 15 nm2，并结合HfO2/TiN栅极堆叠。沿导线的高单轴应变使带隙能量降低了约140 meV，并提高了电子迁移率。在室温下，n通道和p通道器件的理想逆亚阈值斜率为60 (62)mV/dec，离子/ off比高达1010。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Strained silicon nanowire array MOSFETs with high-k/metal gate stack

This paper presents experimental results on metal oxide semiconductor field-effect transistors (MOSFETs) featuring an array of 1000 trigated uniaxially strained nanowires with a cross-sections of 15 × 15 nm² in combination with a HfO₂/TiN gate stack. The high uniaxial strain along the wires reduces the band gap energy by approximately 140 meV and enhances the electron mobility. Ideal inverse subthreshold slopes of n- and p-channel devices of 60 (62) mV/dec at room temperature and I_on/I_off ratios up to 10¹⁰ were obtained.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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