硅衬底上生长的高性能GaN垂直沟槽mosfet

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930472

Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau

{"title":"硅衬底上生长的高性能GaN垂直沟槽mosfet","authors":"Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau","doi":"10.1109/CSW55288.2022.9930472","DOIUrl":null,"url":null,"abstract":"In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (R<inf>ON,sp</inf>) of 0.89 mΩ·cm2, a high maximum drain current (I<inf>D,max</inf>) of 4.1 kA/cm2, a large V<inf>th</inf> of 5.1 V and a breakdown voltage (V<inf>BR</inf>) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate\",\"authors\":\"Renqiang Zhu, Huaxing Jiang, C. Tang, K. Lau\",\"doi\":\"10.1109/CSW55288.2022.9930472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (R<inf>ON,sp</inf>) of 0.89 mΩ·cm2, a high maximum drain current (I<inf>D,max</inf>) of 4.1 kA/cm2, a large V<inf>th</inf> of 5.1 V and a breakdown voltage (V<inf>BR</inf>) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

在这项工作中，我们报告了在具有成本效益的6英寸Si衬底上生长的高性能GaN准垂直沟槽mosfet。在2 μm漂移层的硅基上制备的GaN沟槽mosfet具有低比导通电阻(RON,sp) 0.89 mΩ·cm2，最大漏极电流(ID,max)为4.1 kA/cm2, Vth为5.1 V，击穿电压(VBR)为320 V。

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High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate

In this work, we report high-performance GaN quasi-vertical trench MOSFETs grown on cost-effective 6-inch Si substrates. The fabricated GaN trench MOSFETs on Si, with a 2-μm drift layer, show a low specific ON-resistance (RON,sp) of 0.89 mΩ·cm², a high maximum drain current (ID,max) of 4.1 kA/cm², a large Vth of 5.1 V and a breakdown voltage (VBR) of 320 V, resulting from the combination of epilayer growth condition tuning and proper electric field management in the device.

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2022 Compound Semiconductor Week (CSW)

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