{"title":"高功率工作的多栅极pHEMT建模","authors":"Cejun Wei, Yu Zhu, D. Bartle","doi":"10.1109/EDSSC.2013.6628227","DOIUrl":null,"url":null,"abstract":"Multi-gate pHEMTs are key elements in switch circuits in wireless communication applications due to their low loss and high power capacity with relatively small sizes. A great concern on their high power operation is the power step-back at on-state and at certain power level with harmonics deteriorated. In this paper we discuss the mechanism of power step-back. The power that can pass through an on-state pHEMT is dependent on saturation current, or the maximum available channel current. A premature power step-back or gain collapse in a multi-gate pHEMT is due to largely reduced saturation channel current caused by self-heating in center gate or gates. We developed a self-heating thermal model for multi-gate pHEMTs that can predict power level at that the power step-back and related hysteresis occur.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multi-gate pHEMT modeling for high-power operation\",\"authors\":\"Cejun Wei, Yu Zhu, D. Bartle\",\"doi\":\"10.1109/EDSSC.2013.6628227\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Multi-gate pHEMTs are key elements in switch circuits in wireless communication applications due to their low loss and high power capacity with relatively small sizes. A great concern on their high power operation is the power step-back at on-state and at certain power level with harmonics deteriorated. In this paper we discuss the mechanism of power step-back. The power that can pass through an on-state pHEMT is dependent on saturation current, or the maximum available channel current. A premature power step-back or gain collapse in a multi-gate pHEMT is due to largely reduced saturation channel current caused by self-heating in center gate or gates. We developed a self-heating thermal model for multi-gate pHEMTs that can predict power level at that the power step-back and related hysteresis occur.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628227\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multi-gate pHEMT modeling for high-power operation
Multi-gate pHEMTs are key elements in switch circuits in wireless communication applications due to their low loss and high power capacity with relatively small sizes. A great concern on their high power operation is the power step-back at on-state and at certain power level with harmonics deteriorated. In this paper we discuss the mechanism of power step-back. The power that can pass through an on-state pHEMT is dependent on saturation current, or the maximum available channel current. A premature power step-back or gain collapse in a multi-gate pHEMT is due to largely reduced saturation channel current caused by self-heating in center gate or gates. We developed a self-heating thermal model for multi-gate pHEMTs that can predict power level at that the power step-back and related hysteresis occur.