STT-MRAM Endurance Characterization For Enterprise Systems

Spin Torque Transfer Magneto-resistive Random-Access Memory (STT-MRAM) is a type of non-volatile memory that stores data in magnetic domains. It is a very interesting market space that STT-MRAM will support, trying to take the best of both worlds, the ever fast paced DRAM with scaling challenges and the non-volatile world of Flash with latency challenges. Initial setup, bring-up and endurance characterization of the STT-MRAM device are summarized. An overview of the tester-board design, along with the endurance characterization methodology and test results are discussed. Learning shared to introduce and educate about STT-MRAM bring-up and help future system designs using STT-MRAM. STT-MRAM is not as scalable as DRAM or Flash but has high potential based on its performance and persistence characteristics.