M. Akazawa, E. Ohue, H. Ishii, H. Iwadate, H. Hasegawa
{"title":"采用新型原位界面控制工艺，采用薄Si层对In/sub 0.53/Ga/sub 0.47/As进行表面钝化","authors":"M. Akazawa, E. Ohue, H. Ishii, H. Iwadate, H. Hasegawa","doi":"10.1109/ICIPRM.1990.202992","DOIUrl":null,"url":null,"abstract":"The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Surface passivation of In/sub 0.53/Ga/sub 0.47/As using thin Si layers by novel in-situ interface control processes\",\"authors\":\"M. Akazawa, E. Ohue, H. Ishii, H. Iwadate, H. Hasegawa\",\"doi\":\"10.1109/ICIPRM.1990.202992\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202992\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202992","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Surface passivation of In/sub 0.53/Ga/sub 0.47/As using thin Si layers by novel in-situ interface control processes
The surface passivation of In/sub 0.53/Ga/sub 0.47/As using an ultrathin Si interface control layer (ICL) and a photo-CVD SiO/sub 2/ overlayer is characterized using X-ray photoelectron spectroscopy (XPS) and the capacitance-voltage measurements in order to determine the optimum structure. It is found that molecular beam epitaxy (MBE) gives more favorable electrical results than low-temperature photo CVD for the growth of an ICL. There exists an optimum thickness of about 10 mA for the MBE Si ICL where N/sub ss/ is significantly reduced. XPS characterization indicates that the ICL of the optimum thickness retains pseudomorphic bond matching to the InGaAs layer during processing still prevent selective oxidation of the InGaAs surface.<>
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