一种基于5800 μm2电阻的温度传感器,在- 50°C到105°C范围内,单点修整误差为±1.2°C (3σ)

Yongtae Lee, Woojun Choi, Taewoong Kim, Seungwoo Song, K. Makinwa, Youngcheol Chae
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引用次数: 12

摘要

这封信描述了一种紧凑的基于电阻的温度传感器,用于微处理器和dram的热监测。它由一个RC多相滤波器(PPF)组成,该滤波器由一个基于双过零(ZC)检测方案的锁频环路(FLL)读出。该传感器采用65纳米CMOS制造,占地5800 μm2,在- 50°C至105°C的宽温度范围(- 50°C至105°C)内实现中等精度[±1.2°C (3σ)]。这比以前的紧凑型电阻传感器好2倍。工作电压为0.85 ~ 1.3 v,功耗为32.5 μ a,转换时间为1 ms,分辨率为2.8 mk,对应于分辨率FoM为0.26 pJ•K2。
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A 5800-μm2 Resistor-Based Temperature Sensor With a One-Point Trimmed Inaccuracy of ±1.2 °C (3σ) From −50 °C to 105 °C in 65-nm CMOS
This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μm2 and achieves moderate accuracy [±1.2 °C (3σ)] over a wide temperature range (−50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μA and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ•K2.
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