具有最小电流消耗的CMOS无电阻带隙基准

Florin-Silviu Dumitru, S. Mihalache, G. Brezeanu
{"title":"具有最小电流消耗的CMOS无电阻带隙基准","authors":"Florin-Silviu Dumitru, S. Mihalache, G. Brezeanu","doi":"10.1109/SMICND.2015.7355235","DOIUrl":null,"url":null,"abstract":"This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between -40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.","PeriodicalId":325576,"journal":{"name":"2015 International Semiconductor Conference (CAS)","volume":"259 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A CMOS resistorless bandgap reference with minimized current consumption\",\"authors\":\"Florin-Silviu Dumitru, S. Mihalache, G. Brezeanu\",\"doi\":\"10.1109/SMICND.2015.7355235\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between -40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.\",\"PeriodicalId\":325576,\"journal\":{\"name\":\"2015 International Semiconductor Conference (CAS)\",\"volume\":\"259 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2015.7355235\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2015.7355235","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

本文提出了一种采用CMOS 0.35um/5V工艺设计的静态电流最小的无阻带隙基准电路。该电路依靠强反转运算和“逆函数”,实现一阶温度补偿。仿真结果表明,在-40°c至125°c之间,20ppm/℃,6uA静态电流和2.8V最小电源电压。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A CMOS resistorless bandgap reference with minimized current consumption
This paper presents a resistorless bandgap reference with minimized quiescent current, designed in a CMOS 0.35um/5V technology. The circuit relies on strong inversion operation, and the “inverse function”, achieving first order temperature compensation. Simulation results indicate 20ppm/deg.C between -40deg.C to 125deg.C, 6uA quiescent current and 2.8V minimum supply voltage.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Precise and robust enable control circuitry for LDO voltage regulators Pressure sensors based on high frequency operating GaN FBARs A comparative study by TCAD simulation for two different n-in-p silicon particle detector structures Nanowire junctionless silicon-on-insulator MOSFETs: Operation features and electrical characterization New antennas with dielectric resonators of axial symmetry
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1