任意形状多层互连的电磁兼容建模与优化

Boyuan Zhu, Junwei Lu, Mingcheng Zhu, Mei Jiang
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引用次数: 2

摘要

在超大规模集成电路(VLSI)中,任意的互连结构会导致不可预测的寄生电容,从而产生EMC问题,即寄生噪声、信号紊乱、控制失效、数据异步等。本文研究了一种基于有限元法计算超大规模集成电路互连电容的电磁兼容建模和优化方法。对二维和三维互连模型进行了仿真,并将电容提取结果与实验测量结果进行了比较,验证了有限元方法的一致性和准确性。此外,采用非支配排序遗传算法II (NSGA-II)对多层互连结构进行了耦合电容优化。
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Arbitrary shape multilayer interconnects EMC modelling and optimization
In very-large-scale-integration (VLSI), arbitrary structure of interconnections leads to unpredictable parasitic capacitance that generates EMC issues, i.e., parasitic noise, signal disorder, control failure, data asynchronous, etc. This paper investigates an EMC modelling and optimization method in calculating interconnect capacitance of VLSI interconnects based on the finite element method (FEM). Two- and three-dimensional interconnect models are simulated and the results of capacitance extraction are compared with experimental measurements, which proved the consistency and accuracy of FEM. Furthermore, optimizations of coupling capacitance are applied on multilayer interconnection structures by the non-dominated sorting genetic algorithm II (NSGA-II).
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