{"title":"一种模型自适应的MOSFET参数提取系统","authors":"M. Kondo, H. Onodera, K. Tamaru","doi":"10.1109/ASPDAC.1995.486248","DOIUrl":null,"url":null,"abstract":"A model-adaptable parameter extraction system is developed to catch up with rapid development of new advanced MOSFET models. The model-adaptability relies on two techniques; a model-adaptable initial value estimation method and a design environment that stores and reuses extraction procedures. The system makes it easy to develop an extraction procedure for a new MOSFET model through the reuse of an existing procedure for a previous model. We have verified that the system can accommodate major SPICE models including Level2-3 and BSIM1-3.","PeriodicalId":119232,"journal":{"name":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A model-adaptable MOSFET parameter extraction system\",\"authors\":\"M. Kondo, H. Onodera, K. Tamaru\",\"doi\":\"10.1109/ASPDAC.1995.486248\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model-adaptable parameter extraction system is developed to catch up with rapid development of new advanced MOSFET models. The model-adaptability relies on two techniques; a model-adaptable initial value estimation method and a design environment that stores and reuses extraction procedures. The system makes it easy to develop an extraction procedure for a new MOSFET model through the reuse of an existing procedure for a previous model. We have verified that the system can accommodate major SPICE models including Level2-3 and BSIM1-3.\",\"PeriodicalId\":119232,\"journal\":{\"name\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASPDAC.1995.486248\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of ASP-DAC'95/CHDL'95/VLSI'95 with EDA Technofair","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASPDAC.1995.486248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A model-adaptable MOSFET parameter extraction system
A model-adaptable parameter extraction system is developed to catch up with rapid development of new advanced MOSFET models. The model-adaptability relies on two techniques; a model-adaptable initial value estimation method and a design environment that stores and reuses extraction procedures. The system makes it easy to develop an extraction procedure for a new MOSFET model through the reuse of an existing procedure for a previous model. We have verified that the system can accommodate major SPICE models including Level2-3 and BSIM1-3.
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