{"title":"射频/微波集成电路宽带嵌入式衬底噪声测量","authors":"M. He, W. Eisenstadt, R. Fox","doi":"10.1109/ARFTG.2006.8361657","DOIUrl":null,"url":null,"abstract":"In this paper, a down conversion-based embedded substrate noise measurement up to 20 GHz is presented in detail. This on-chip measurement method utilizes a down conversion mixer and shows a measurement range from less than-60 dBm to greater than 2 dBm. Special test structures and measurement circuit were designed and fabricated in a BiCMOS 180nm-technology with a high-resistivity substrate. A semi-physical equivalent circuit model based on experimentally determined data is proposed and has been verified by embedded measurements. Error analysis will be reported later.","PeriodicalId":302468,"journal":{"name":"2006 68th ARFTG Conference: Microwave Measurement","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Broadband embedded substrate noise measurement for RF/Microwave ICs\",\"authors\":\"M. He, W. Eisenstadt, R. Fox\",\"doi\":\"10.1109/ARFTG.2006.8361657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a down conversion-based embedded substrate noise measurement up to 20 GHz is presented in detail. This on-chip measurement method utilizes a down conversion mixer and shows a measurement range from less than-60 dBm to greater than 2 dBm. Special test structures and measurement circuit were designed and fabricated in a BiCMOS 180nm-technology with a high-resistivity substrate. A semi-physical equivalent circuit model based on experimentally determined data is proposed and has been verified by embedded measurements. Error analysis will be reported later.\",\"PeriodicalId\":302468,\"journal\":{\"name\":\"2006 68th ARFTG Conference: Microwave Measurement\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 68th ARFTG Conference: Microwave Measurement\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2006.8361657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 68th ARFTG Conference: Microwave Measurement","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2006.8361657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Broadband embedded substrate noise measurement for RF/Microwave ICs
In this paper, a down conversion-based embedded substrate noise measurement up to 20 GHz is presented in detail. This on-chip measurement method utilizes a down conversion mixer and shows a measurement range from less than-60 dBm to greater than 2 dBm. Special test structures and measurement circuit were designed and fabricated in a BiCMOS 180nm-technology with a high-resistivity substrate. A semi-physical equivalent circuit model based on experimentally determined data is proposed and has been verified by embedded measurements. Error analysis will be reported later.
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