使用Ge薄膜的InGaAs晶圆室温键合

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947446

M. Uomoto, Y. Yamada, T. Hoshi, M. Nada, T. Shimatsu

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摘要

采用Ge薄膜对InGaAs晶圆进行了室温键合研究。晶圆片每侧均粘接有0.5 nm厚的锗膜。在340℃退火后，结合晶片显示出较强的结合力，TEM图像显示结合界面无空位。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Room temperature bonding of InGaAs wafers using thin Ge films

Room temperature bonding of InGaAs wafers using thin Ge films was studied. Wafers were bonded even with 0.5 nm thick Ge film on each side. Bonded wafers showed strong bonding force after annealing at 340 oC, with no vacancy at the bonded interface in TEM images.

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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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