F. Demangeot, J. Frandon, M. Renucci, B. Beaumont, P. Gibart
{"title":"氮化镓中的声子色散","authors":"F. Demangeot, J. Frandon, M. Renucci, B. Beaumont, P. Gibart","doi":"10.1109/SIM.1996.570889","DOIUrl":null,"url":null,"abstract":"GaN layers grown on sapphire (0001) substrates were studied at room temperature by Raman Spectroscopy. Directional dependance of frequency and polarization properties of the extraordinary modes, resulting from the anisotropic wurtzite, was evidenced by macro- and micro-Raman measurements. Second order Raman spectra were recorded and their completely symmetric component was analyzed in terms of phonon density of states. Due to the lack of phonon spectrum calculations, use was made of available q-dispersion curves of the closely related ZnO compound for phonon assignment.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Phonon dispersion in gallium nitride\",\"authors\":\"F. Demangeot, J. Frandon, M. Renucci, B. Beaumont, P. Gibart\",\"doi\":\"10.1109/SIM.1996.570889\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN layers grown on sapphire (0001) substrates were studied at room temperature by Raman Spectroscopy. Directional dependance of frequency and polarization properties of the extraordinary modes, resulting from the anisotropic wurtzite, was evidenced by macro- and micro-Raman measurements. Second order Raman spectra were recorded and their completely symmetric component was analyzed in terms of phonon density of states. Due to the lack of phonon spectrum calculations, use was made of available q-dispersion curves of the closely related ZnO compound for phonon assignment.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570889\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570889","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaN layers grown on sapphire (0001) substrates were studied at room temperature by Raman Spectroscopy. Directional dependance of frequency and polarization properties of the extraordinary modes, resulting from the anisotropic wurtzite, was evidenced by macro- and micro-Raman measurements. Second order Raman spectra were recorded and their completely symmetric component was analyzed in terms of phonon density of states. Due to the lack of phonon spectrum calculations, use was made of available q-dispersion curves of the closely related ZnO compound for phonon assignment.
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