M. Hioki, T. Endoh, H. Sakuraba, M. Lenski, F. Masuoka
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An analysis of program and erase operation for FC-SGT flash memory cells
The floating channel type surrounding gate transistor (FC-SGT) flash memory cell realizes high-speed bipolarity program and erase operations. In this investigation, the time dependence of the surface potential in the floating channel region, which strongly affects program and erase performance, is studied during program and erase operation. By analyzing the carrier generation processes in the floating channel region, the program and erase operation for FC-SGT flash memory cells is clarified.
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