一种新的MMIC振荡器相位降噪技术

A. Darwish, A. Ezzeddine, H.-L.A. Hung, F. Phelleps
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引用次数: 1

摘要

提出了一种降低振荡器相位噪声的新方法。该技术利用一对限制二极管来保持金属半导体场效应晶体管(MESFET)在线性区域工作。设计、制造并测试了一个x波段单片微波集成电路(MMIC)振荡器来演示该概念。测量到载波在5khz处相位噪声降低了15db
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A new phase noise reduction technique for MMIC oscillators
A novel technique for reducing oscillator phase noise has been demonstrated. The technique utilized a pair of limiting diodes to keep the metal-semiconductor field-effect transistor (MESFET) operating a linear region. An X-band monolithic microwave integrated circuit (MMIC) oscillator was designed, fabricated, and tested to demonstrate the concept. A reduction of 15 dB in phase noise at 5 kHz from the carrier was measured.<>
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