{"title":"薄膜耗尽型SOI mosfet的建模","authors":"F. Balestra, M. Benachir, G. Ghibaudo, J. Brini","doi":"10.1109/SOSSOI.1990.145732","DOIUrl":null,"url":null,"abstract":"No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"44 3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of thin film depletion-mode SOI MOSFETs\",\"authors\":\"F. Balestra, M. Benachir, G. Ghibaudo, J. Brini\",\"doi\":\"10.1109/SOSSOI.1990.145732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"44 3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145732\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
对于完全耗尽的薄膜耗尽型SOI mosfet，目前还没有可靠的分析模型。在弱堆积区，前后界面之间的耦合尤为重要。作者通过考虑SOI结构的所有参数，提出了完全耗尽DM SOI mosfet的分析模型。可以对两个或三个界面(带有Si衬底)进行建模。
No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled.<>
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