{"title":"用于空间应用的GaN HEMT","authors":"T. Satoh, Ken Osawa, Atsushi Nitta","doi":"10.1109/BCICTS.2018.8551070","DOIUrl":null,"url":null,"abstract":"This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"GaN HEMT for Space Applications\",\"authors\":\"T. Satoh, Ken Osawa, Atsushi Nitta\",\"doi\":\"10.1109/BCICTS.2018.8551070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
摘要
本文介绍了适合空间应用的氮化镓HEMT。针对P/L/ s波段的应用,我们开发了高功率,高效率的GaN HEMT,可用于通信卫星或导航卫星。在连续波条件下,其最高功率为200W。我们还开发了用于x波段应用的高功率/增益GaN IM HEMT,如深空探测卫星或地球观测卫星。这些GaN HEMT装置已提交进行符合MIL标准的空间资格测试,并被确认具有足够的空间应用可靠性。我们还进行了辐射硬度测试。在空间应用中,抗辐射是一个值得关注的问题。我们的GaN HEMT被证实具有足够的辐射硬度稳健性。
This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.