用于空间应用的GaN HEMT

T. Satoh, Ken Osawa, Atsushi Nitta
{"title":"用于空间应用的GaN HEMT","authors":"T. Satoh, Ken Osawa, Atsushi Nitta","doi":"10.1109/BCICTS.2018.8551070","DOIUrl":null,"url":null,"abstract":"This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"GaN HEMT for Space Applications\",\"authors\":\"T. Satoh, Ken Osawa, Atsushi Nitta\",\"doi\":\"10.1109/BCICTS.2018.8551070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

摘要

本文介绍了适合空间应用的氮化镓HEMT。针对P/L/ s波段的应用,我们开发了高功率,高效率的GaN HEMT,可用于通信卫星或导航卫星。在连续波条件下,其最高功率为200W。我们还开发了用于x波段应用的高功率/增益GaN IM HEMT,如深空探测卫星或地球观测卫星。这些GaN HEMT装置已提交进行符合MIL标准的空间资格测试,并被确认具有足够的空间应用可靠性。我们还进行了辐射硬度测试。在空间应用中,抗辐射是一个值得关注的问题。我们的GaN HEMT被证实具有足够的辐射硬度稳健性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
GaN HEMT for Space Applications
This paper describes GaN HEMT which was qualified for space applications. For P/L/S-band applications, we have developed high power and high efficiency GaN HEMT which can be used for communication satellite or navigation satellite. The highest power of them is 200W under CW conditions. We also developed high power/gain GaN IM HEMT for X-band applications such as deep space probe satellites or earth observation satellites. These GaN HEMT devices were submitted to space qualification tests that comply with the MIL standard and were confirmed to have sufficient reliability for space applications. We also conducted radiation hardness tests. Radiation resistance is of concern in space applications. Our GaN HEMT was confirmed to have enough robustness for radiation hardness.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PA SiGe BiCMOS Current Status and Future Trends in Europe Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS Quantification of Dopant Profiles in SiGe HBT Devices Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1