用阴极发光和波长色散光谱研究InGaAs/GaAs应变层异质结构中椭圆形缺陷

J. J. Russell-Harriott, A. Moon, J. Zou, D. Cockayne, B. Usher
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引用次数: 7

摘要

分子束外延(MBE)已被广泛应用于外延膜的生长,特别是当需要精确控制外延层厚度或突然结时。然而,在mbe生长的晶格不匹配的InGaAs/GaAs异质结构中发现了椭圆形缺陷。这些是错配位错产生的主要来源。因此,有必要了解这些椭圆形缺陷的性质。在这项研究中,我们使用阴极发光(CL)和波长色散x射线光谱(WDS)研究了椭圆形缺陷的性质。
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Investigation of oval defects in InGaAs/GaAs strained-layer heterostructures using cathodoluminescence and wavelength dispersive spectroscopy
Molecular beam epitaxy (MBE) has been widely used to grow epitaxial films, particularly when precise control over the epitaxial layer thickness or abrupt junctions are required. However, oval defects have been found in MBE-grown lattice-mismatched InGaAs/GaAs heterostructures. These act as a primary source of misfit dislocation generation. As a result, it is essential to understand the nature of these oval defects. In this study, we investigate the nature of oval defects using cathodoluminescence (CL) and wavelength dispersive X-ray spectroscopy (WDS).
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