S. Redois, E. Kerhervé, A. Ghiotto, B. Louis, V. Petit, Y. Mancuso
{"title":"具有51.8% SiGe峰值PAE的准逆f类x波段高效功率放大器","authors":"S. Redois, E. Kerhervé, A. Ghiotto, B. Louis, V. Petit, Y. Mancuso","doi":"10.23919/EuMIC.2019.8909621","DOIUrl":null,"url":null,"abstract":"This paper presents a compact quasi inverse class-F highly efficient power amplifier (PA) based on the 130 nm SiGe technology. The purpose is to drive high output power with high power added efficiency (PAE) over the X-band, while ensuring a good amplitude and phase linearity. To do that, a differential cascode topology with low base impedance has been used. Measured results exhibit 51.8% peak PAE with 25.7 dBm output power at 9 GHz. To our knowledge, this PA demonstrates the highest efficiency with linear behaviour among Si-based X-band power amplifiers found in literature.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quasi Inverse Class-F X-Band Highly Efficient Power Amplifier with 51.8% Peak PAE in SiGe\",\"authors\":\"S. Redois, E. Kerhervé, A. Ghiotto, B. Louis, V. Petit, Y. Mancuso\",\"doi\":\"10.23919/EuMIC.2019.8909621\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a compact quasi inverse class-F highly efficient power amplifier (PA) based on the 130 nm SiGe technology. The purpose is to drive high output power with high power added efficiency (PAE) over the X-band, while ensuring a good amplitude and phase linearity. To do that, a differential cascode topology with low base impedance has been used. Measured results exhibit 51.8% peak PAE with 25.7 dBm output power at 9 GHz. To our knowledge, this PA demonstrates the highest efficiency with linear behaviour among Si-based X-band power amplifiers found in literature.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909621\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909621","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quasi Inverse Class-F X-Band Highly Efficient Power Amplifier with 51.8% Peak PAE in SiGe
This paper presents a compact quasi inverse class-F highly efficient power amplifier (PA) based on the 130 nm SiGe technology. The purpose is to drive high output power with high power added efficiency (PAE) over the X-band, while ensuring a good amplitude and phase linearity. To do that, a differential cascode topology with low base impedance has been used. Measured results exhibit 51.8% peak PAE with 25.7 dBm output power at 9 GHz. To our knowledge, this PA demonstrates the highest efficiency with linear behaviour among Si-based X-band power amplifiers found in literature.
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