{"title":"纳米cmos可靠性-工艺和器件可靠性监视器的接口表征方法","authors":"S. Chung, Shih-Hung Chen, D. Lo","doi":"10.1109/IPFA.2003.1222752","DOIUrl":null,"url":null,"abstract":"Interface characterization is fundamental to the understanding of device reliability as well as the process monitoring, in particular for the development of an efficient tool for analyzing the hot carrier reliability of ultra-thin gate oxide CMOS devices. This paper will cover an overview of advanced charge pumping (CP), DCIV, Gated-Diode (GD), techniques for the interface characterization of CMOS reliabilities. Its potential use for the device reliability study, and oxide quality monitoring for the state-of-the-art CMOS technology will be presented. More recent developments for nano-CMOS device applications will be demonstrated. Moreover, further development and the roadblocks of these techniques will be addressed.","PeriodicalId":266326,"journal":{"name":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2003-07-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Interface characterization methodology for nano-CMOS reliability-process and device reliability monitors\",\"authors\":\"S. Chung, Shih-Hung Chen, D. Lo\",\"doi\":\"10.1109/IPFA.2003.1222752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interface characterization is fundamental to the understanding of device reliability as well as the process monitoring, in particular for the development of an efficient tool for analyzing the hot carrier reliability of ultra-thin gate oxide CMOS devices. This paper will cover an overview of advanced charge pumping (CP), DCIV, Gated-Diode (GD), techniques for the interface characterization of CMOS reliabilities. Its potential use for the device reliability study, and oxide quality monitoring for the state-of-the-art CMOS technology will be presented. More recent developments for nano-CMOS device applications will be demonstrated. Moreover, further development and the roadblocks of these techniques will be addressed.\",\"PeriodicalId\":266326,\"journal\":{\"name\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2003.1222752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 10th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2003.1222752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Interface characterization methodology for nano-CMOS reliability-process and device reliability monitors
Interface characterization is fundamental to the understanding of device reliability as well as the process monitoring, in particular for the development of an efficient tool for analyzing the hot carrier reliability of ultra-thin gate oxide CMOS devices. This paper will cover an overview of advanced charge pumping (CP), DCIV, Gated-Diode (GD), techniques for the interface characterization of CMOS reliabilities. Its potential use for the device reliability study, and oxide quality monitoring for the state-of-the-art CMOS technology will be presented. More recent developments for nano-CMOS device applications will be demonstrated. Moreover, further development and the roadblocks of these techniques will be addressed.