N. Tanabe, T. Matsuki, S. Saitoh, T. Takeuchi, S. Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, K. Amanuma, T. Hase, Y. Miyasaka, T. Kunio
{"title":"一种用于高密度非易失性铁电存储器的位线上铁电电容器(F-COB)电池","authors":"N. Tanabe, T. Matsuki, S. Saitoh, T. Takeuchi, S. Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, K. Amanuma, T. Hase, Y. Miyasaka, T. Kunio","doi":"10.1109/VLSIT.1995.520888","DOIUrl":null,"url":null,"abstract":"A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories\",\"authors\":\"N. Tanabe, T. Matsuki, S. Saitoh, T. Takeuchi, S. Kobayashi, T. Nakajima, Y. Maejima, Y. Hayashi, K. Amanuma, T. Hase, Y. Miyasaka, T. Kunio\",\"doi\":\"10.1109/VLSIT.1995.520888\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"2015 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520888\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A ferroelectric capacitor over bit-line (F-COB) cell for high density nonvolatile ferroelectric memories
A ferroelectric capacitor over bit-line (F-COB) cell is proposed for high density nonvolatile ferroelectric memories (NVFRAMs). This memory cell with 0.7 /spl mu/m design rule was successfully fabricated using a newly-developed fabrication process, combining CMP and MOCVD techniques. Good ferroelectric properties of storage capacitor, having a remanent polarization of 15 /spl mu/C/cm/sup 2/ and leakage current density of 10/sup -6/ A/cm/sup 2/, have been realized without degradation in CMOS characteristics.
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