一种新型、高性能、亚20nm损耗模式双栅(DMDG) Si/Si/sub -x /Ge/sub (1-x)/ Si通道PMOSFET

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269373

T. Krishnamohan, C. Jungemann, K. Saraswat

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引用次数: 8

摘要

提出了一种新型的高性能sub- 20nm DMDG Si/Si/sub x/Ge/sub (1-x)/ Si沟道PMOSFET。全频带蒙特卡罗和一维泊松-薛定谔模拟表明，与传统Si dgfet相比，I/sub / on/和/spl / sim/2/spl时间/开关速度增加43%，功耗降低35%。截止频率超过1000 GHz，使该设备也非常适合模拟应用。

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A novel, very high performance, sub-20nm depletion-mode double-gate (DMDG) Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET

A novel, high performance sub-20 nm DMDG Si/Si/sub x/Ge/sub (1-x)//Si channel PMOSFET is proposed. Full-band Monte Carlo and 1D Poisson-Schrodinger simulations show a 43% increase in I/sub on/ and /spl sim/2/spl times/ increase in switching speeds at 35% lower power dissipation compared to conventional Si DGFETs. The cut-off frequencies are in excess of 1000 GHz making the device also very suitable for analog applications.

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IEEE International Electron Devices Meeting 2003

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