Optimization of macropore silicon morphology etched by photo-electrochemistry

Macropore silicon etching with photo-electro-chemistry was carried out under different experimental conditions, including etching voltage, current density and wave length of optical source et al. The surface, diameter of pore and wall of the macropore silicon were observed with Scanning Electronic Microscope (SEM) and Metallographic Microscope. The influencing factors on morphology of pore were analyzed. Experimental parameters for fabricating high properties macropore silicon were also determined. Macropore silicon with depth of pores up to 300 ¿m and aspect ratios more than 75 was etched with photo-electrochemistry.