{"title":"利用汽车用镍钯金键合垫克服低钾铜晶片的切割挑战","authors":"T. Tran, V. Mathew, W. S. Koh, K. Yow, Y. K. Au","doi":"10.1109/EPTC.2012.6507109","DOIUrl":null,"url":null,"abstract":"New automotive mission profiles include more than 3500 total hours at 150ºC. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With nickel about four times as hard as aluminum, OPM plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Surface roughness and hardness measurements were taken on OPM variations. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Laser grooving followed by mechanical dicing of OPM wafers was also performed. Packages underwent extensive reliability stress conditions. The associated process improvements described in this paper supported a successful integration of a 55nm die technology in Low Profile Quad Flat Package with Exposed Pad (LQFP-EP) meeting and exceeding AEC grade 0 requirements.","PeriodicalId":431312,"journal":{"name":"2012 IEEE 14th Electronics Packaging Technology Conference (EPTC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Overcoming dicing challenges for low-K copper wafers using nickel-palladium-gold bond pads for automotive application\",\"authors\":\"T. Tran, V. Mathew, W. S. Koh, K. Yow, Y. K. Au\",\"doi\":\"10.1109/EPTC.2012.6507109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"New automotive mission profiles include more than 3500 total hours at 150ºC. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With nickel about four times as hard as aluminum, OPM plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Surface roughness and hardness measurements were taken on OPM variations. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Laser grooving followed by mechanical dicing of OPM wafers was also performed. Packages underwent extensive reliability stress conditions. 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引用次数: 3
摘要
新的汽车任务配置文件包括在150ºC下的总时间超过3500小时。为了满足新的汽车要求,塑料包装必须满足AEC 0级或更高的要求。传统塑料封装的一个关键限制是在铝键垫上使用金键线。高温贮存条件下金属间转化导致的金-铝金属间降解仍然是主要的可靠性问题。在铝键垫或铜键垫上使用镍/钯、镍/金或镍/钯/金的焊垫再金属化,提供高贵可靠的金属互连。研究了用化学镀镍/化学镀钯/浸金对铝衬垫进行再金属化的低钾铜晶片的切割工艺。开发晶圆是披萨掩模晶圆,在其上设计了多个模具设计和划线网格生产控制(SGPC)模块。SGPC模块采用铝制探头垫设计,用于监控晶圆级工艺控制。晶圆片上的所有铝特征都镀有镍/钯/金OPM。由于镍的硬度是铝的四倍,镀OPM的SGPC比镀铝的常规SGPC更难切割。硅侧壁开裂,裂纹向模具方向扩展,导致后端线(BEOL)分层和器件失效。对OPM变化进行了表面粗糙度和硬度测量。进行了广泛的机械切割研究,以调节故障并解决切割挑战。对OPM晶圆进行了激光刻槽和机械切割。封装经历了广泛的可靠性应力条件。本文中描述的相关工艺改进支持了55nm芯片技术在Low Profile Quad Flat Package with Exposed Pad (LQFP-EP)中的成功集成,达到并超过了AEC 0级要求。
Overcoming dicing challenges for low-K copper wafers using nickel-palladium-gold bond pads for automotive application
New automotive mission profiles include more than 3500 total hours at 150ºC. To satisfy new automotive requirements, plastic packages must meet AEC Grade 0 or higher. One key limitation of the conventional plastic package is the use of gold bond wire on aluminum bond pad. Au-Al intermetallic degradation due to intermetallic transformation in high temperature storage condition remains the main reliability concern. Pad re-metallization using nickel/palladium, nickel/gold or nickel/palladium/gold over aluminum bond pad or copper bond pad offers a noble and reliable metal interconnect. This study focused on the development of dicing process for low-K-copper wafers having aluminum pad re-metallized with electroless nickel / electroless palladium / immersion gold Over Pad Metallization (OPM). Development wafers were pizza mask wafers on which multiple die designs and scribe grid production control (SGPC) modules were designed. SGPC modules are designed with aluminum probe pads that are used to monitor wafer-level process control. All aluminum features on the wafer were plated with nickel/palladium/gold OPM. With nickel about four times as hard as aluminum, OPM plated SGPC's were much more difficult to dice than conventional SGPC's with aluminum pads. Cracking on silicon sidewall with crack propagating towards the die was found to cause back-end-of-line (BEOL) delamination and device failure. Surface roughness and hardness measurements were taken on OPM variations. Extensive mechanical dicing studies were conducted to modulate the failures and resolve the dicing challenge. Laser grooving followed by mechanical dicing of OPM wafers was also performed. Packages underwent extensive reliability stress conditions. The associated process improvements described in this paper supported a successful integration of a 55nm die technology in Low Profile Quad Flat Package with Exposed Pad (LQFP-EP) meeting and exceeding AEC grade 0 requirements.