基于3d集成56 Gb/s NRZ/PAM4可重构分段马赫-曾德尔调制器的硅光子发射机

Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo
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引用次数: 18

摘要

硅光子互连有可能打破与电链路固有相关的带宽距离限制。提出了一种基于分段电极马赫-曾德尔调制器(SE-MZM)的双模NRZ/PAM4硅光子发射机。发射器的电气部分采用16nm FinFET工艺制造,利用堆叠cmos推挽驱动级,其中包括一个平行的非对称快速放电路径,以补偿由反偏MZM二极管段的非线性电容引起的缓慢过渡边缘。高速PAM4调制是通过相位插补器实现的,用于在MSB和LSB段之间进行粗延迟控制,并通过在每个段的基础上使用独立的数字控制延迟线来匹配光传播延迟。当驱动采用130 nm SOI工艺设计的倒装键合MZM时,56 Gb/s光发射机实现了9.5 dB消光比和12.6 pJ/bit的功率效率(不包括激光功率)。
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A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter
Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.
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