Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo
{"title":"基于3d集成56 Gb/s NRZ/PAM4可重构分段马赫-曾德尔调制器的硅光子发射机","authors":"Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo","doi":"10.1109/BCICTS.2018.8551089","DOIUrl":null,"url":null,"abstract":"Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter\",\"authors\":\"Cheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, T. Pinguet, M. Peterson, V. Saxena, S. Palermo\",\"doi\":\"10.1109/BCICTS.2018.8551089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"84 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8551089\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8551089","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon photonic interconnects have the potential to break bandwidth-distance limitations intrinsically associated with electrical links. This paper presents a dual-mode NRZ/PAM4 silicon photonic transmitter based on a segmented-electrode Mach-Zehnder Modulator (SE-MZM). The electrical portion of the transmitter, fabricated in a 16nm FinFET process, utilizes stacked-CMOS push-pull driver stages that include a parallel asymmetric fast discharging path to compensate for the slow transition edge caused by the nonlinear capacitance of the reversed-biased MZM diode segments. High-speed PAM4 modulation is achieved with phase interpolators for coarse delay control between the MSB and LSB segments and by employing independent digital-controlled delay lines on a per-segment basis to match the optical propagation delay. The 56 Gb/s optical transmitter achieves 9.5 dB extinction ratio and 12.6 pJ/bit power efficiency, excluding laser power, when driving the flip-chip bonded MZM designed in a 130 nm SOI process.