H. Wang, B. Nelson, L. Shaw, R. Kasody, Y. Hwang, W. Jones, D. Brunone, M. Sholly, J. Maguire, T. Best
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引用次数: 0
摘要
本文介绍了一种采用0.2 μ m InGaAs/GaAs伪晶高电子迁移率晶体管(HEMT)技术的完整单片上变频宏电池的设计和性能。描述了单个组件，包括2-10 ghz中频放大器，v波段上变频混频器和v波段放大器。在设计过程中进行了线性和非线性电路仿真，以预测电路的性能。概述了各个电路的设计。测量结果表明，在v频段注入2-10 GHz中频，并在54 GHz注入10 dBm的本振(LO)驱动器，可获得10 dB的转换增益。
A monolithic V-band upconverter, using 0.2 mu m InGaAs/GaAs pseudomorphic HEMT technology
The authors present the design and performance of a complete monolithic upconverter macrocell using 0.2- mu m InGaAs/GaAs pseudomorphic high-electron-mobility-transistor (HEMT) technology. Individual components, including a 2-10-GHz IF amplifier, a V-band upconverting mixer, and a V-band amplifier are described. Both linear and nonlinear circuit simulations were performed during the design to predict the circuit performance. The individual circuit designs are outlined. The measured results demonstrated a conversion gain of 10 dB at V-band by injecting a 2-10-GHz IF frequency with a local-oscillator (LO) drive of 10 dBm at 54 GHz.<>
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