建模框架在集成电路设计与可靠性中的应用

P. M. Souare, C. Bouchard, É. Duchesne, James Zaccardi, David Pettit, Francois Vachon
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摘要

为了提高微电子封装的可靠性,本文提出了一个完整的分析,通过提供足够精确的数值模型来预测微电子封装中相关缺陷和失效模式的产品可靠性,这些缺陷和失效模式包括模块翘曲、焊料疲劳裂纹、TIM撕裂或分层以及下填充角裂纹,这些缺陷和失效模式导致芯片电路分层和倒装焊点疲劳增加。数值模拟是使用名为PACK的专用云软件基础设施进行的,使用单向宏到微模型方法。模型验证分为两个主要方面。首先,基于底部表面冶金(BSM)翘曲的宏观模型的线性行为。利用ICOS数据对几个包的BSM模块翘曲进行了数值模型验证,结果表明,有限元模型预测的室温翘曲和形状与ICOS数据吻合。其次,疲劳建模的准确性是根据设备的数据进行评估的,这些设备也经历了类似于模型的热循环。然后使用诺顿蠕变模型,使用从实验来源获得的SAC材料特性进行蠕变的非线性模拟。采用应变能密度(SEND)作为衡量焊料蠕变和互连疲劳的指标。在互连的顶部和底部的几层元素上平均SEND,形成一个标准化的体积,其中蠕变(和失效概率)最高。在位于内存模块角落的原型上检测到早期热循环焊料疲劳失效。这些观测结果与计算得到的SEND图和数值模型给出的分布相一致。失效分析(FA)表明,裂纹在底部衬垫颈部附近开始,并沿着BGA扩展,这也与模型度量在关键BGA上的分布一致。最后,在硅模的阴影下发现了层压BGA树脂的开裂失效。层压板BSM阻焊冯米塞斯应力图被证明可以预测观察到分层和Cu线开裂的关键位置。总之,该研究能够利用可用的可靠性应力数据来校准数值模型并设置参考基线,同时为IBM开发团队提供指导,以缩小最佳可靠的低成本包配置的选择范围,以进行资格决策。展示了我们的建模平台在预测模块翘曲方面的有效性,尽管封装的复杂性和微电子封装设计和制造中遇到的失效模式。
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Applied Modeling Framework in Integrated Circuit Design and Reliability
A complete analysis was presented to improve the reliability of microelectronics packages by providing numerical models that are sufficiently precise to predict product reliability for relevant defects and failure modes in microelectronics packaging such as module warpage, solder fatigue cracking, TIM tearing or delamination and underfill corner cracking causing chip circuits delamination and increased flip chip solder joint fatigue. The numerical simulations were performed using a specialized cloud software infrastructure named PACK using a one-way macro to micro model approach. Model validation was split into two main aspects. First, the linear behavior of the macro model was based on bottom surface metallurgy (BSM) warpage. BSM module warpage of several packages from ICOS data was used to validate the numerical model, and both room temperature warpage as well as the shape predicted by the FEM model agreed with the ICOS data. Second, the fatigue modeling accuracy was evaluated based on data issued from devices built and subjected to thermal cycles akin to the models. The non-linear simulation of creep was then performed using Norton’s creep model, using SAC material properties obtained from experimental sources. The strain energy density (SEND) was used as a metric to quantify solder creep and interconnect fatigue. The SEND was averaged over a few layers of elements at the top and bottom of the interconnects, forming a normalized volume where creep (and failure probability) was the highest. Early thermal cycles solder fatigue fails were detected electrically on the prototypes, located on the memory module’s corners. These observations were confirmed with dye and pry which corresponded with the computed SEND map and distribution given by the numerical model. Failure analysis (FA) showed that cracks initiated near the bottom side pad neck and propagating along the BGA which was also in agreement with the modeled metric’s distribution across critical BGAs. Finally, laminate BGA resin cracking fail was found under the shadow of a silicon die. Laminate BSM solder mask von Mises stress mapping was shown to be predictive of the critical locations where delamination and Cu line cracking was observed. In conclusion, the study was able to leverage available reliability stress data to calibrate the numerical model and set reference baseline while providing IBM development team guidance to narrow down the selection of best reliable lower cost package configurations for qualification decision, demonstrating the effectiveness of our modeling platform to predict module warpage despite the complexity of the package and the failure modes encountered in the design and manufacture of microelectronics packaging.
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