频率和时域建模工具，用于有效的射频/微波晶体管表征

2009 3rd International Conference on Signals, Circuits and Systems (SCS) Pub Date : 2009-11-01 DOI:10.1109/ICSCS.2009.5412251

S. Gaoua, S. Asadi, M. Yagoub

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引用次数: 2

摘要

广泛应用于射频/微波系统的有源器件，如场效应晶体管(fet)需要精确建模以实现可靠的系统设计。在本文中，作者提出了两种有效的FET建模技术。首先，提出了一种模糊神经频域方法来选择最合适的场效应管等效电路模型。然后，研究了一种时域方法来帮助开发增强的分布式晶体管模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Frequency- and time-domain modeling tools for efficient RF/microwave transistor characterization

Widely used in RF/microwave systems, active devices like field effect transistors (FETs) need to be accurately modeled to achieve a reliable system design. In this paper, the authors proposed two techniques for efficient FET modeling. First, a fuzzy-neural frequency-domain approach was developed to allow selecting the most suitable electrical equivalent circuit model of a FET. Then, a time-domain approach was investigated to help developing enhanced distributed transistor models.

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2009 3rd International Conference on Signals, Circuits and Systems (SCS)

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