S. Piotrowicz, E. Chartier, O. Jardel, J. Dufraisse, G. Callet, J. Jacquet, D. Lancereau, E. Morvan, R. Aubry, N. Sarazin, C. Dua, M. Oualli, M. A. Di-Forte Poisson, S. Delage
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Development of InAlN/GaN HEMTs Power Devices in S-Band
We report on AlInN/GaN HEMTs fabricated using 0.7µm gate length on SiC substrate by Low Pressure Metal Organic Vapor Phase Epitaxy. Static and pulsed DC characteristics show a maximum dc transconductance of 275mS/mm and drain current of 0.9A/mm. Small signal characterizations show Ft and Fmag of 15 and 40 GHz respectively. Load-pull power measurements were performed at S-Band. At 3.5 GHz, an output power of 13W (41.2dBm) corresponding to 6.6W/mm of power density with a PAE of 70% is reached in pulse mode on 2mm devices. 19.2mm power dies allow us to achieve an output power of 56W with 54% of PAE at 2 GHz. To our knowledge, this result represents the highest output power ever reported for AlInN-based HEMT technology.
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