固体源分子束外延生长高品质的砷磷裂解细胞

W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam
{"title":"固体源分子束外延生长高品质的砷磷裂解细胞","authors":"W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam","doi":"10.1109/COMMAD.1998.791657","DOIUrl":null,"url":null,"abstract":"InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"116 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells\",\"authors\":\"W. Shi, D.H. Zhang, H. Zheng, S. Yoon, C. Kam\",\"doi\":\"10.1109/COMMAD.1998.791657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"116 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

研究了固体源分子束外延生长的InGaAsP材料。晶格匹配的未掺杂In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/在室温下表现出0.875 eV的强发射光谱峰,全宽半峰为37.4 meV,电学性能良好,表面光滑。在几乎所有的砷压力下,砷的掺入效率都高于磷的掺入效率,并且可以用关于梁等效压力比f/sub As//(f/sub As/+f/sub p/)的多项式表达式很好地描述。在0.4 ~ 0.5的光束等效压力比下生长的非有意掺杂层表现出高霍尔迁移率、低净载流子浓度和小表面粗糙度。砷压力过低或过高会使层的质量恶化。在77 K时,当束当量压比大于0.35时生长的材料均为n型,而当束当量压比小于0.35时生长的材料均为p型,表明碳杂质具有较强的两性行为。
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High quality InGaAsP grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells
InGaAsP materials grown by solid source molecular beam epitaxy using valve arsenic and phosphorous cracker cells are Investigated. The lattice-matched undoped In/sub 0.7/Ga/sub 0.3/As/sub 0.68/P/sub 0.32/ shows a strong emission spectrum peaking at 0.875 eV at room temperature with a full width at half maximum of 37.4 meV, good electrical properties and smooth surface. The incorporation efficiency of arsenic is found to be higher than that of phosphorous in almost all arsenic pressure, and can be described well by a polynomial expression with respect to the beam equivalent pressure ratio f/sub As//(f/sub As/+f/sub p/). The unintentionally doped layers grown at beam equivalent pressure ratios between 0.4 and 0.5 show high Hall mobility, low net carrier concentration and small surface roughness. Less and excess arsenic pressure is find to deteriorate the quality of the layers. It is also found that the materials grown at beam equivalent pressure ratios greater than 0.35 are all n-type at 77 K, but p-type for those grown below 0.35, indicating a strong amphoteric behaviour of carbon impurities.
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