J. Sanchez, P. Leturcq, P. Austin, R. Berriane, M. Breil, C. Anceau, C. Ayela
{"title":"串行保护应用的新型高压限流装置的设计和制造","authors":"J. Sanchez, P. Leturcq, P. Austin, R. Berriane, M. Breil, C. Anceau, C. Ayela","doi":"10.1109/ISPSD.1996.509481","DOIUrl":null,"url":null,"abstract":"This paper describes the design and fabrication of new two-terminal semiconductor devices, based on the concept of \"functional integration\", acting as current limiter for high voltage applications (400 V to 1,000 V). In the first section, the optimization of structures and fabrication processes are considered using 2D simulation tools SUPREM IV and PISCES. In the second section, the first experimental results of these devices are presented.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Design and fabrication of new high voltage current limiting devices for serial protection applications\",\"authors\":\"J. Sanchez, P. Leturcq, P. Austin, R. Berriane, M. Breil, C. Anceau, C. Ayela\",\"doi\":\"10.1109/ISPSD.1996.509481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and fabrication of new two-terminal semiconductor devices, based on the concept of \\\"functional integration\\\", acting as current limiter for high voltage applications (400 V to 1,000 V). In the first section, the optimization of structures and fabrication processes are considered using 2D simulation tools SUPREM IV and PISCES. In the second section, the first experimental results of these devices are presented.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and fabrication of new high voltage current limiting devices for serial protection applications
This paper describes the design and fabrication of new two-terminal semiconductor devices, based on the concept of "functional integration", acting as current limiter for high voltage applications (400 V to 1,000 V). In the first section, the optimization of structures and fabrication processes are considered using 2D simulation tools SUPREM IV and PISCES. In the second section, the first experimental results of these devices are presented.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
