Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications

The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compared to the Si MOSFET. However, the Si MOSFET has a lower gate leakage current (Ig) and lower power consumption at low operating frequencies. We also investigate the effect of scaling on the performance and power consumption of both MOSFETs. The results show that scaling improves the performance of both devices, but the power consumption increases as the device dimensions are reduced. The comparative analysis of Si and GaAs MOSFETs for low power applications provides useful insights into the selection of suitable MOSFET technology for specific applications. The results show that both Si and GaAs MOSFETs have their advantages and disadvantages, and the choice depends on the application requirements.