{"title":"以 TiN 为缓冲层的硅基底上外延 Nb:SrTiO3 薄膜的近紫外侧光电效应","authors":"Fang Wang, Yu Liu, Tian Yu, Cai, Wenfeng Xiang","doi":"10.1007/s13391-023-00469-6","DOIUrl":null,"url":null,"abstract":"<div><p>In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO<sub>3</sub> (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"269 - 274"},"PeriodicalIF":2.1000,"publicationDate":"2023-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer\",\"authors\":\"Fang Wang, Yu Liu, Tian Yu, Cai, Wenfeng Xiang\",\"doi\":\"10.1007/s13391-023-00469-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO<sub>3</sub> (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 3\",\"pages\":\"269 - 274\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-023-00469-6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-023-00469-6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
近年来，基于包晶体材料的紫外光探测器异质结的研究备受关注。本研究的重点是通过使用 TiN 薄膜作为缓冲层，在硅基底上制备高质量的单晶 Nb:SrTiO3 (NSTO) 薄膜。该研究深入探讨了薄膜表现出的横向光伏效应。利用 X 射线衍射和高分辨率透射电子显微镜进行的表征证实了 NSTO 薄膜的卓越品质。值得注意的是，观察到的位置灵敏度达到了令人印象深刻的 43.9 mV mm-1。对横向光伏效应的分析表明，响应时间和弛豫时间分别约为 105.6 毫微秒和 4.49 微秒。有趣的是，弛豫时间的拟合结果表明，NSTO/TiN/Si 异质结构中的缺陷极少。这些发现凸显了 NSTO/TiN/Si 异质结的巨大潜力，为其在位置变化技术领域的广泛应用提供了前景广阔的途径。
Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer
In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO3 (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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